Paper detail

Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi

The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At $T$\,$\approx$\,70 K, the position of both the high-temperature shoulder of the thermopower peak and the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficient $ν$ assumes a large maximum and the Hall mobility $μ_H$ diminishes to below 1 cm$^2$/Vs. These cause the dimension-less ratio $ν$/$μ_H$ $-$ a measure of the energy dispersion of the charge scattering time $τ(ε)$ $-$ to exceed that of classical metals and semiconductors by two orders of magnitude. Concomitantly, the resistivity exhibits a hump and the magnetoresistance changes its sign. Our observations hint at a resonant scattering of the charge carriers at the magnetic crossover, imposing strong constraints on the microscopic interpretation of the robust thermopower enhancement in FeSi.