Renormalization of the band gap in 2D materials through the competition between electromagnetic and four-fermion interactions

Recently the renormalization of the band gap $m$, in both WSe$_2$ and MoS$_2$, has been experimentally measured as a function of the carrier concentration $n$. The main result establishes a decreasing of hundreds of meV, in comparison with the bare band gap, as the carrier concentration increases. These materials are known as transition metal dichalcogenides and their low-energy excitations are, approximately, described by the massive Dirac equation. Using Pseudo Quantum Electrodynamics (PQED) to describe the electromagnetic interaction between these quasiparticles and from renormalization group analysis, we obtain that the renormalized mass describes the band gap renormalization with a function given by $m(n)/m_0=(n/n_0)^{C_λ/2}$, where $m_0=m(n_0)$ and $C_λ$ is a function of the coupling constant $λ$. We compare our theoretical results with the experimental findings for WSe$_2$ and MoS$_2$, and we conclude that our approach is in agreement with these experimental results for reasonable values of $λ$. In addition we introduced a Gross-Neveu (GN) interaction which could simulate an disorder/impurity-like microscopic interaction. In this case, we show that there exists a critical coupling constant, namely, $λ_c \approx 0,66$ in which the beta function of the mass vanishes, providing a stable fixed point in the ultraviolet limit. For $λ>λ_c$, the renormalized mass decreases while for $λ<λ_c$ it increases with the carrier concentration.

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