Proximity effects in a topological-insulator/Mott-insulator heterostructure

preprint2013arXivOpen access

Abstract

We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized mid-gap states inside the MI region, which still have a remnant of the helical energy-spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling VV, largely enhances the electron mass inside the MI and also splits a single Dirac-cone at edge sites into the spatially-separated two Dirac-cones in the strong VV region.

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