Abstract
The role of polariton-electron scattering on the performance characteristics of an electrically injected GaAs-based quantum well microcavity diode in the strong coupling regime has been investigated. An electron gas is introduced in the quantum wells by modulation doping with silicon dopants. It is observed that polariton-electron scattering suppresses the relaxation bottleneck in the lower polariton branch. However, it is not adequate to produce a degenerate coherent condensate at k|| ~ 0 and coherent emission.
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