Abstract
The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers in Si/SiO nanocrystals. Relevance of the phonon decay to the experimentally observed hot carrier photoluminescence is discussed.
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