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I. N. Yassievich appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Published work
The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers in Si/SiO$_2$ nanocrystals. Relevance of the phonon decay to the experimentally observed hot carrier photoluminescence is discussed.
The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the $Γ$-point decreases with size reduction: quantum confinement enhances radiative recombination across the direct bandgap and introduces its "red" shift for smaller grains. We postulate to identify the frequently reported efficient blue emission (F-band) from Si nanocrystals with this zero-phonon recombination. In a dedicated experiment, we confirm the "red" shift of the F-band, supporting the proposed identification.
Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals single-phonon processes are ruled out by energy conservation law.
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields.