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Pairing Mechanism of the Heavily Electron Doped FeSe Systems: Dynamical Tuning of the Pairing Cutoff Energy

We studied pairing mechanism of the heavily electron doped FeSe (HEDIS) systems, which commonly have one incipient hole band -- a band top below the Fermi level by a finite energy distance $ε_b$ -- at $Γ$ point and ordinary electron bands at $M$ points in Brillouin zone (BZ). We found that the system allows two degenerate superconducting solutions with the exactly same $T_c$ in clean limit: the incipient $s^{\pm}_{he}$-gap ($Δ_h^{-} \neq 0$, $Δ_e^{+} \neq 0$) and $s_{ee}^{++}$-gap ($Δ_h =0$, $Δ_e^{+} \neq 0$) solutions with different pairing cutoffs, $Λ_{sf}$ (spin fluctuation energy) and $ε_b$, respectively. The $s_{ee}^{++}$-gap solution, in which the system dynamically renormalizes the original pairing cutoff $Λ_{sf}$ to $Λ_{phys}=ε_b$ ($< Λ_{sf}$), therefore actively eliminates the incipient hole band from forming Cooper pairs, but without loss of $T_c$, becomes immune to the impurity pair-breaking. As a result, the HEDIS systems, by dynamically tuning the pairing cutoff and selecting the $s_{ee}^{++}$-pairing state, can always achieve the maximum $T_c$ -- the $T_c$ of the degenerate $s^{\pm}_{he}$ solution in the ideal clean limit -- latent in the original pairing interactions, even in dirty limit.