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Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film

The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 oC. The origin of the NDR behavior is shown to be related to the ionic defect of oxygen vacancies (VO..) present in the film. On the basis of analyzing the leakage mechanism and surface potential behavior, the NDR behavior can be understood by considering the competition between the polarized distribution and neutralization of VO...

preprint2012arXivOpen access
Qingqing KeAmit KumarXiaojie LouKaiyang ZengJohn Wang
cond-mat.mtrl-sci
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Open access5 authors1 topic
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Qingqing KeAmit KumarXiaojie LouKaiyang ZengJohn Wang

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