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Xiaojie Lou

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Published work

6 published item(s)

preprint2014arXiv

Microstructural Evolution of Charged Defects in the Fatigue Process of Polycrystalline BiFeO3 Thin Films

Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the "hypothesis of variation in charged defects", which however are rarely evidenced by experimental observation. Here, using a combination of complex impedance spectra techniques, piezoresponse force microscopy and first-principles theory, we examine the microscopic evolution and redistribution of charged defects during the electrical cycling in BiFeO3 thin films. The dynamic formation and melting behaviors of oxygen vacancy (VO) order are identified during the fatigue process. It reveals that the isolated VO tend to self-order along grain boundaries to form a planar-aligned structure, which blocks the domain reversals. Upon further electrical cycling, migration of VO within vacancy clusters is accommodated with a lower energy barrier (~0.2 eV) and facilitates the formation of nearby-electrode layer incorporated with highly concentrated VO. The interplay between the macroscopic fatigue and microscopic evolution of charged defects clearly demonstrates the role of ordered VO cluster in the fatigue failure of BiFeO3 thin films.

preprint2013arXiv

Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions

The contribution of a built-in electric field to ferroelectric phase transition in asymmetric ferroelectric tunnel junctions is studied using a multiscale thermodynamic model. It is demonstrated in details that there exists a critical thickness at which an unusual ferroelectric-\'\' polar non-ferroelectric\rq\rq phase transition occurs in asymmetric ferroelectric tunnel junctions. In the \'\' polar non-ferroelectric\rq\rq phase, there is only one non-switchable polarization which is caused by the competition between the depolarizing field and the built-in field, and closure-like domains are proposed to form to minimize the system energy. The transition temperature is found to decrease monotonically as the ferroelectric barrier thickness is decreased and the reduction becomes more significant for the thinner ferroelectric layers. As a matter of fact, the built-in electric field does not only result in smearing of phase transition but also forces the transition to take place at a reduced temperature. Such findings may impose a fundamental limit on the work temperature and thus should be further taken into account in the future ferroelectric tunnel junction-type or ferroelectric capacitor-type devices.

preprint2013arXiv

Genuine driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films

The polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/effective cycling voltage through varying the waveform of the electrical excitation. Interestingly, it is found that the fatigue endurance of the film is determined by the effective voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the effective voltage should be considered as the genuine driving voltage determining the polarization fatigue in PLZT antiferroelectric films.

preprint2012arXiv

Origin of the Enhanced Polarization in La and Mg Co-substituted BiFeO3 Thin Film during the Fatigue Process

We have studied the polarization fatigue of La and Mg co-substituted BiFeO3 thin film, where a polarization peak is observed during the fatigue process. The origin of such anomalous behavior is analyzed on the basis of the defect evolution using temperature-dependent impedance spectroscopy. It shows that the motion of oxygen vacancies (VO..) is associated with a lower energy barrier, accompanied by the injection of electrons into the film during the fatigue process. A qualitative model is proposed to explain the fatigue behavior, which involves the modification of the Schottky barrier upon the accumulation of VO.. at the metal-dielectric interface.

preprint2012arXiv

Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film

The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 oC. The origin of the NDR behavior is shown to be related to the ionic defect of oxygen vacancies (VO..) present in the film. On the basis of analyzing the leakage mechanism and surface potential behavior, the NDR behavior can be understood by considering the competition between the polarized distribution and neutralization of VO...

preprint2012arXiv

Oxygen-vacancy-related relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (La,Mg-codoped BiFeO3) ferroelectric thin film

Oxygen-vacancies-related dielectric relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (BLFM) thin film have been investigated by temperature-dependent impedance spectroscopy from 40 oC up to 200 oC. We found that hopping electrons and single-charged oxygen vacancies (VO.) coexist in the BLFM thin film and make contribution to dielectric response of grain and grain boundary respectively. The activation energy for VO. is shown to be 0.94 eV in the whole temperature range investigated, whereas the distinct activation energies for electrons are 0.136 eV below 110oC and 0.239 eV above 110oC in association with hopping along the Fe2+- VO.-Fe3+ chain and hopping between Fe2+-Fe3+, respectively, indicating different hopping processes for electrons. Moreover, it has been found that hopping electrons is in form of long rang movement, while localized and long range movement of oxygen vacancies coexist in BLFM film. The Cole-Cole plots in modulus formalism show a poly-dispersive nature of relaxation for oxygen vacancies and a unique relaxation time for hopping electrons. The scaling behavior of modulus spectra further suggests that the distribution of relaxation times for oxygen vacancies is temperature independent.