Abstract
This paper is devoted to the unidimensional analysis of a 2-ports silicon resonator vibrating in thickness--extensional mode. Both excitation and detection ports are capacitive transducers used to control the system of longitudinal elastic waves established along the thickness of a layered structure. The analysis consists of integrating the capacitive transduction of longitudinal elastic waves within a specific implementation of the general scheme of impedance methods largely used as standard tools for the modelling of RF-MEMS.
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