Abstract
We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the , and directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.
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