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Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.

preprint2014arXivOpen access
Arvind AjoyS. E. LauxKota V. R. M. MuraliS. Karmalkar
cond-mat.mes-hall
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Open access4 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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Arvind AjoyS. E. LauxKota V. R. M. MuraliS. Karmalkar

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