BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Arvind Ajoy

Arvind Ajoy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-halleess.SYSystems and Control

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2022arXiv

Analysis of Ferroelectric Negative Capacitance-Hybrid MEMS Actuator Using Energy-Displacement Landscape

We propose an energy-based framework to analyze the statics and dynamics of a ferroelectric negative capacitance-hybrid Microelectromechanical System (MEMS) actuator. A mapping function that relates the charge on the ferroelectric to displacement of the movable electrode, is used to obtain the Hamiltonian of the hybrid actuator in terms of displacement. We then use graphical energy-displacement and phase portrait plots to analyze static pull-in, dynamic pull-in and pull-out phenomena of the hybrid actuator. Using these, we illustrate the low-voltage operation of the hybrid actuator to static and step inputs, as compared to the standalone MEMS actuator. The results obtained are in agreement with the analytical predictions and numerical simulations. The proposed framework enables straightforward inclusion of adhesion between the contacting surfaces, modeled using van der Waals force. We show that the pull-in voltage is not affected, while the pull-out voltage is reduced due to adhesion. The proposed framework provides a physics-based tool to design and analyze negative capacitance based low-voltage MEMS actuators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transistor Switches using Active Piezoelectric Gate Barriers

This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacitor resulting in a negative capacitance. The first consequence of this amplification is a boost in the on-current of the transistor. As a second consequence, employing the Lagrangian method, we find that by using the negative capacitance of a highly compliant piezoelectric barrier, one can potentially reduce the subthreshold slope of a transistor below the room temperature Boltzmann limit of 60 mV/decade. However, this may come at the cost of hysteretic behavior in the transfer characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Brillouin zone unfolding of Complex Bands in a nearest neighbour Tight Binding scheme

Complex bands $\vec{k}^{\perp}(E)$ in a semiconductor crystal, along a general direction $\vec{n}$, can be computed by casting Schrödinger's equation as a generalized polynomial eigenvalue problem. When working with primitive lattice vectors, the order of this eigenvalue problem can grow large for arbitrary $\vec{n}$. It is however possible to always choose a set of non-primitive lattice vectors such that the eigenvalue problem is restricted to be quadratic. The complex bands so obtained need to be unfolded onto the primitive Brillouin zone. In this paper, we present a unified method to unfold real and complex bands. Our method ensures that the measure associated with the projections of the non-primary wavefunction onto all candidate primary wavefunctions is invariant with respect to the energy $E$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.

0 citations0 reviewsNo code linkedOpen access