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Arvind Ajoy

Arvind Ajoy appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scieess.SYSystems and Control

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Published work

6 published item(s)

preprint2022arXiv

Analysis of Ferroelectric Negative Capacitance-Hybrid MEMS Actuator Using Energy-Displacement Landscape

We propose an energy-based framework to analyze the statics and dynamics of a ferroelectric negative capacitance-hybrid Microelectromechanical System (MEMS) actuator. A mapping function that relates the charge on the ferroelectric to displacement of the movable electrode, is used to obtain the Hamiltonian of the hybrid actuator in terms of displacement. We then use graphical energy-displacement and phase portrait plots to analyze static pull-in, dynamic pull-in and pull-out phenomena of the hybrid actuator. Using these, we illustrate the low-voltage operation of the hybrid actuator to static and step inputs, as compared to the standalone MEMS actuator. The results obtained are in agreement with the analytical predictions and numerical simulations. The proposed framework enables straightforward inclusion of adhesion between the contacting surfaces, modeled using van der Waals force. We show that the pull-in voltage is not affected, while the pull-out voltage is reduced due to adhesion. The proposed framework provides a physics-based tool to design and analyze negative capacitance based low-voltage MEMS actuators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transistor Switches using Active Piezoelectric Gate Barriers

This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacitor resulting in a negative capacitance. The first consequence of this amplification is a boost in the on-current of the transistor. As a second consequence, employing the Lagrangian method, we find that by using the negative capacitance of a highly compliant piezoelectric barrier, one can potentially reduce the subthreshold slope of a transistor below the room temperature Boltzmann limit of 60 mV/decade. However, this may come at the cost of hysteretic behavior in the transfer characteristics.

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preprint2014arXiv

Brillouin zone unfolding method for effective phonon spectra

Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approximate bandstructures can be computed for random alloys and most often the Virtual Crystal Approximation (VCA) is used. Unfolding methods [T. B. Boykin, N. Kharche, G. Klimeck, and M. Korkusinski, J. Phys.: Condens. Matt. 19, 036203 (2007).] have proven very useful for tight-binding calculations of alloy electronic structure without the problems in the VCA, and the mathematical analogy between tight-binding and valence-force-field approaches to the phonon problem suggest they be employed here as well. However, there are some differences in the physics of the two problems requiring modifications to the electronic structure approach. We therefore derive a phonon alloy bandstructure (vibrational mode) approach based on our tight-binding electronic structure method, modifying the band-determination method to accommodate the different physical situation. Using the method, we study In$_x$Ga$_{1-x}$As alloys and find very good agreement with available experiments.

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preprint2014arXiv

Brillouin zone unfolding of Complex Bands in a nearest neighbour Tight Binding scheme

Complex bands $\vec{k}^{\perp}(E)$ in a semiconductor crystal, along a general direction $\vec{n}$, can be computed by casting Schrödinger's equation as a generalized polynomial eigenvalue problem. When working with primitive lattice vectors, the order of this eigenvalue problem can grow large for arbitrary $\vec{n}$. It is however possible to always choose a set of non-primitive lattice vectors such that the eigenvalue problem is restricted to be quadratic. The complex bands so obtained need to be unfolded onto the primitive Brillouin zone. In this paper, we present a unified method to unfold real and complex bands. Our method ensures that the measure associated with the projections of the non-primary wavefunction onto all candidate primary wavefunctions is invariant with respect to the energy $E$.

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preprint2014arXiv

Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.

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preprint2014arXiv

Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements allowing estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10^3, and with current densities of 1.02 μA/μm, and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET, revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.

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