Mottness in two-dimensional van der Waals Nb3_3X8_8 monolayers (X=Cl, Br, and I)

preprint2023arXivOpen access

Abstract

We investigate strong electron-electron correlation effects on 2-dimensional van der Waals materials Nb3_3X8_8 (X=Cl, Br, I). We find that the monolayers Nb3_3X8_8 are ideal systems close to the strong correlation limit. They can be described by a half-filled single band Hubbard model in which the ratio between the Hubbard, U, and the bandwidth, W, U/W ≈\approx 5 ∼\sim 10. Both Mott and magnetic transitions of the material are calculated by the slave boson mean field theory. Doping the Mott state, a dx2−y2+idxyd_{x^2-y^2}+id_{xy} superconducting pairing instability is found. We also construct a tunable bilayer Hubbard system for two sliding Nb3_3X8_8 layers. The bilayer system displays a crossover between the band insulator and Mott insulator.

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