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Paper detail

Microchannel avalanche photodiode with wide linearity range

Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.

preprint2010arXivOpen access
Z. SadygovA. OlshevskiN. AnphimovT. BokovaV. ChalyshevI. Chirikov-ZorinA. DovlatovZ. KrumshteinR. MekhtievaR. MukhtarovV. ShukurovaM. TroitskayaV. Zhezher
physics.ins-det
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Z. SadygovA. OlshevskiN. AnphimovT. BokovaV. ChalyshevI. Chirikov-ZorinA. DovlatovZ. KrumshteinR. MekhtievaR. MukhtarovV. ShukurovaM. TroitskayaV. Zhezher

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