Abstract

Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity ρρ. The relaxation time τCRτ_{\rm CR} shows a negative temperature dependence, which is similar to that of the transport scattering time τtτ_t obtained from ρρ. The ratio τCR/τtτ_{\rm CR}/τ_t at 0.4 K increases as the electron density NsN_s decreases, and exceeds unity when NsN_s approaches the critical density for the metal-insulator transition.

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