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Researcher profile

Tohru Okamoto

Tohru Okamoto contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-mat.supr-con

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Published work

6 published item(s)

preprint2013arXiv

In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system

Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field

Two dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14 T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular magnetic field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitting.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems

Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optical Hall Effect in the Integer Quantum Hall Regime

Optical Hall conductivity $σ_{xy}(ω)$ is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle ($\sim$ fine structure constant $\sim$ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateau-like structure around the Landau-level filling $ν=2$. The result, which fits with the behavior expected from the carrier localization effect in the ac regime, indicates that the plateau structure, although not quantized, still exists in the terahertz regime.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Well-width dependence of valley splitting in Si/SiGe quantum wells

The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.

0 citations0 reviewsNo code linkedOpen access