Abstract
We employ the methods of atomistic simulation to investigate the climb of edge dislocation at nanovoids by analyzing the energetics of the underlying mechanism. A novel simulation strategy has been demonstrated to estimate the release of surface energy of the nanovoid during the void induced climb. The curvature of the pinned dislocation segment is found to play a key role in mediating this unique mechanism of dislocation climb. Our study reveals that the kinetics of void-induced climb process is fundamentally distinct from the conventional diffusion-mediated climb.
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