Abstract
Thin films of the ferromagnet FeGe were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic FeGe phase. The observed high temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron-magnon scattering at low temperatures, point to the presence of strong spin polarization in this material. Measurements of the Hall resistivity, , show contributions from both the ordinary Hall effect and anomalous Hall effect, , from which we determined the charge carrier concentration and mobility. Measurements also show a small negative magnetoresistance in both the longitudinal and transverse geometries. FeGe holds promise as a useful spintronic material, especially for its semiconductor compatibility.
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