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Localized States and Resultant Band Bending in Graphene Antidot Superlattices

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.

preprint2011arXivOpen access
Milan BegliarbekovOnejae SulJohn J. SantanelloNan AiXi ZhangEui-Hyeok YangStefan Strauf
cond-mat.mes-hall
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Open access7 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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Milan BegliarbekovOnejae SulJohn J. SantanelloNan AiXi ZhangEui-Hyeok YangStefan Strauf

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