Abstract
New limits on EC and ECEC processes in Se have been obtained using a 600 cm HPGe detector and an external source consisting of 1600 g of a natural selenium powder. For different EC and ECEC transitions (to the ground and excited states) obtained limits are on the level yr at 90\% C.L. In particular, for the potentially resonant transition into the 1204.2 keV excited state of Ge a lower half-life limit of yr at 90\% C.L. has been obtained. Possibility to increase the sensitivity of such measurements is discussed.
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