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High-temperature thermoelectric properties of novel layered bismuth-sulfide LaO1-xFxBiS2

We have investigated the high-temperature thermoelectric properties of the layered compound LaO1-xFxBiS2. The electrical resistivity of LaOBiS2 showed an anomalous behavior; a metal-semiconductor transition was observed around 270 K. It was found that the value of the electrical resistivity decreased with F substitution. The Seebeck coefficient decreased with increasing F concentration. The highest power factor of 1.9 W/cmK2 at 480 C was obtained for LaOBiS2.

preprint2013arXivOpen access
Atsushi OmachiJoe KajitaniTakafumi HiroiOsuke MiuraYoshikazu Mizuguchi
cond-mat.supr-con
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Open access5 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
Citations: 0Reviews: 0Saves: 0Code: not linkedDataset: not linkedInstitutions: 0

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Atsushi OmachiJoe KajitaniTakafumi HiroiOsuke MiuraYoshikazu Mizuguchi

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