Abstract

High-performance thermoelectric oxides could offer a great energy solution for integrated and embedded applications in sensing and electronics industries. Oxides, however, often suffer from low Seebeck coefficient when compared with other classes of thermoelectric materials. In search of high-performance thermoelectric oxides, we present a comprehensive density functional investigation, based on GGA+U+U formalism, surveying the 3d and 4d transition-metal-containing ferrites of the spinel structure. Consequently, we predict MnFe2_2O4_4 and RhFe2_2O4_4 have Seebeck coefficients of ∼±600\sim \pm 600 μμV K−1^{-1} at near room temperature, achieved by light hole and electron doping. Furthermore, CrFe2_2O4_4 and MoFe2_2O4_4 have even higher ambient Seebeck coefficients at ∼±700\sim \pm 700 μμV K−1^{-1}. In the latter compounds, the Seebeck coefficient is approximately a flat function of temperature up to ∼700\sim 700 K, offering a tremendous operational convenience. Additionally, MoFe2_2O4_4 doped with 101910^{19} holes/cm3^3 has a calculated thermoelectric power factor of 689.81689.81 μμW K−2^{-2} m−1^{-1} at 300300 K, and 455.67455.67 μμW K−2^{-2} m−1^{-1} at 600600 K. The thermoelectric properties predicted here can bring these thermoelectric oxides to applications at lower temperatures traditionally fulfilled by more toxic and otherwise burdensome materials.

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