Abstract
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density are associated with band degeneracies, Fermi surface topology, and interband scattering. Experiments which can measure these deviations are proposed.
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