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Gap modification of atomically thin boron nitride by phonon mediated interactions

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ=1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

preprint2012arXivOpen access
J. P. Hague
cond-mat.mes-hallcond-mat.str-el
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J. P. Hague

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