Ga$_2$O$_3$ TCAD Mobility Parameter Calibration using Simulation Augmented Machine Learning with Physics Informed Neural Network

In this paper, we demonstrate the feasibility of performing automatic Technology Computer Aided Design (TCAD) parameter calibration and extraction using machine learning, with the machine trained solely by TCAD simulation data. The methodology is validated using experimental data. Schottky Barrier Diodes (SBDs) with different effective anode workfunction (WF) are fabricated with emerging ultra-wide bandgap material, Gallium Oxide (Ga2O3), and are measured at various temperatures (T). Their current voltage curves are used for automatic Ga2O3 Philips Unified Mobility (PhuMob) model parameters calibration. Five critical PhuMob parameters were calibrated. The machine consists of an autoencoder and a neural network and is trained solely by TCAD simulation data with variations in WF, T, and the five PhuMob parameters (seven variations in total). Then, Ga2O3 PhuMob parameters are extracted from the noisy experimental curves. Subsequent TCAD simulation using the extracted parameters shows that the quality of the parameters is as good as an expert's calibration at the pre-turned on regime, but not in the on state regime. By using a simple physics-informed neural network, the machine performs as well as the human expert in all regimes.

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