Abstract
It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is developed to describe this effect, and the calculation of the temperature and field dependence of interlayer magnetoresistance is performed. The results obtained agree well with the experimental data in GaAs/AlGaAs heterostructures and in strongly anisotropic organic metals. The proposed theory allows to use the experiments on interlayer magnetoresistance to investigate the electron states, localized by magnetic field and disorder.
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