Abstract
We have investigated the optimally doped tri-layer cuprate BiSrCaCuO (Bi2223) by angle-resolved photoemission spectroscopy, and observed energy bands and Fermi surfaces originated from the outer and inner CuO planes (OP and IP) separately. The OP band is overdoped (hole density 0.26/Cu) with a large d-wave gap of 43 meV while the IP is underdoped ( 0.06/Cu) with an even large gap of 60 meV. We propose that the enhancement of the of IP is due to the minimal influence of out-of-plane disorder and that the OP gap is then enhanced through interlayer coupling, most likely a proximity effect from the IP.
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