Abstract
Simulations of metal nanopatterns embedded in a thin photovoltaic absorber show significantly enhanced absorbance within the semiconductor, with a more than 300% increase for λ = 800 nm. Integrating with AM1.5 solar irradiation, this yields a 70% increase in simulated short circuit current density in a 60 nm amorphous silicon film. Embedding such metal patterns inside an absorber maximally utilizes enhanced electric fields that result from intense, spatially organized, near-field scattering in the vicinity of the pattern. Appropriately configured (i.e. with a thin insulating coating), this optical metamedium architecture may be useful for increasing photovoltaic efficiency in thin film solar cells, including offering prospects for realistic ultrathin hot electron cells.
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