Abstract
We studied the excitation process of silicon under an intense double pulse. We employed the three-temperature (electron, hole, and lattice) model (3TM) together with Maxwell's equations. We solved Maxwell's equations by the finite-difference time-domain approach. The lattice temperature and absorbed energy at the surface increase significantly when the two laser pulses overlap with constructive interference. On the other hand, destructive interference substantially reduces the efficiency of laser excitation. On average, the overlapped double pulse increases the efficiency to about twice the distinct two-pulse case.
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