Abstract

We systematically investigated the in-plane resistivity anisotropy of electron-underdoped EuFe2−xCoxAs2EuFe_{2-x}Co_xAs_2 and BaFe2−xCoxAs2BaFe_{2-x}Co_xAs_2, and hole-underdoped Ba1−xKxFe2As2Ba_{1-x}K_xFe_2As_2. Large in-plane resistivity anisotropy was found in the former samples, while {\it tiny} in-plane resistivity anisotropy was detected in the latter ones. When it is detected, the anisotropy starts above the structural transition temperature and increases smoothly through it. As the temperature is lowered further, the anisotropy takes a dramatic enhancement through the magnetic transition temperature. We found that the anisotropy is universally tied to the presence of non-Fermi liquid T-linear behavior of resistivity. Our results demonstrate that the nematic state is caused by electronic degrees of freedom, and the microscopic orbital involvement in magnetically ordered state must be fundamentally different between the hole and electron doped materials.

Explore this paper’s authors, topics and related work.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Reviews 0

Write a reviewWrite

No reviews yet.

Discussion 0

Add a commentWrite

No comments yet.