Abstract
We reported here the results of the calculations of wavevector dispersion of oscillations frequencies, , and damping of the surface plasmon phonon polaritons (\mbox{SPPhP}) for the heavy-doped GaN sample. We showed that - dependence consists of the three branches with the specific anticrossing behavior due to the interaction of surface plasmon polariton (SPP) with surface phonon polariton(SPhP). The strong renormalization of the damping in the vicinity of the anticrossing region was found. The obtained dispersions of the and were applied for the analytical analysis of exact electrodynamic simulation of the resonant behavior of the reflectivity spectrum of the n-GaN grating.
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