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Paper detail

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

preprint2016arXivOpen access
J. G. ConnellJ. NicholsJ. H. GruenewaldD. -W. KimS. S. A. Seo
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sci
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J. G. ConnellJ. NicholsJ. H. GruenewaldD. -W. KimS. S. A. Seo

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