Abstract
In rare-earth semiconductors, wide ligand and rare-earth 5 bands coexist with localized, partially filled 4 shells. A simultaneous description for both extended and localized states represents a significant challenge for first-principles theories. Here, we combine an {\it ab initio} dynamical mean-field theory approach to strong local correlations with a perturbative application of the semi-local modified Becke-Johnson exchange potential to correct the semiconducting gap. We apply this method to calculate the electronic structure and optical response of the light rare-earth sesquioxides REO (RE= La, Ce, Pr and Nd). Our calculations correctly capture a non-trivial evolution of the optical gap in REO due to a progressive lowering of the 4 states along the series and their multiplet structure. 2 4 hybridization is found to induce a substantial upward shift for the occupied 4 states occurring within the gap, thus reducing the magnitude of the optical gap. We show that a characteristic plateau observed in the optical conductivity in the Pr and Nd sequioxides right above their absorption edge is a fingerprint of 4 states located within the gap.
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