Abstract

Results of resistivity, Hall effect, magnetoresistance, susceptibility and heat capacity measurements are presented for single crystals of indium-doped tin telluride with compositions Sn.988−x_{.988-x}Inx_xTe where 0≤x≤8.40 \leq x \leq 8.4 %, along with microstructural analysis based on transmission electron microscopy. For small indium concentrations, x≤0.9x \leq 0.9 % the material does not superconduct above 0.3 K, and the transport properties are consistent with simple metallic behavior. For x≥2.7x \geq 2.7 % the material exhibits anomalous low temperature scattering and for x≥6.1x \geq 6.1 % bulk superconductivity is observed with critical temperatures close to 2 K. Intermediate indium concentrations 2.72.7% \leq x \leq 3.8% do not exhibit bulk superconductivity above 0.7 K. Susceptibility data indicate the absence of magnetic impurities, while magnetoresistance data are inconsistent with localization effects, leading to the conclusion that indium-doped SnTe is a candidate charge Kondo system, similar to thallium-doped PbTe.

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