Abstract
A method to incorporate polarization charges at heterojunctions in compact models for transistors is presented. By including the polarization sheet charge as a Dirac delta function, the Poisson equation is solved to yield a closed equation for the surface potential. A compact model for transistors based on the surface potential incorporating polarization charges describes the on-state as well as the off-state regimes of device operation. The new method of incorporating polarization charges in compact models helps make a direct connection to the material properties of the transistor. The current-voltage (I-V) curves generated by this model are in good agreement with the experimental data for GaN HEMTs.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.