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Paper detail

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.

preprint2019arXivOpen access
G. IacobucciR. CardarelliS. DébieuxF. A. Di BelloY. FavreD. HayakawaM. KaynakM. NessiL. PaolozziH. RückerDMS SultanP. Valerio
physics.ins-det
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G. IacobucciR. CardarelliS. DébieuxF. A. Di BelloY. FavreD. HayakawaM. KaynakM. NessiL. PaolozziH. RückerDMS SultanP. Valerio

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