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Vladimir Protasenko
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Vladimir Protasenko12 visible / 12 total nodes / 11 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipVladimir ProtasenkoAVladimir ProtasenkoResearcherGe Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended DefectsWGe Quantum Dots Encapsu...preprint / 2013Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N IsotopesWDual Optical Marker Ram...preprint / 2015High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 NanomembranesWHigh-Voltage Field Effe...preprint / 2013Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar BehaviorWTransistors with Chemic...preprint / 2012Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaningWMolecular beam homoepit...preprint / 2022Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)WSelf-Assembled Ge QDs F...preprint / 2014Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlNWEdge emission from 265~...preprint / 2025Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphireWCrystal orientation dic...preprint / 2020Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignmentWEsaki diodes in van der...preprint / 2015Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device DesignWPolarization-Engineerin...preprint / 2010Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growthWLayered transition meta...preprint / 2015
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Vladimir Protasenko

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PaperGe Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended DefectsAuthorship / preprint / 2013PaperDual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N IsotopesAuthorship / preprint / 2015PaperHigh-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 NanomembranesAuthorship / preprint / 2013PaperTransistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar BehaviorAuthorship / preprint / 2012PaperMolecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaningAuthorship / preprint / 2022PaperSelf-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)Authorship / preprint / 2014PaperEdge emission from 265~nm UV-C LEDs grown by MBE on bulk AlNAuthorship / preprint / 2025PaperCrystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV αα-(AlGa)2_2O3_3 on m-plane sapphireAuthorship / preprint / 2020

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