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Shoichi Sato
Researcher
PaperElectron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetimeAuthorship / preprint / 2022PaperSpin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regionsAuthorship / preprint / 2020PaperInfluence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodesAuthorship / preprint / 2011PaperTunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and FeAuthorship / preprint / 2016