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P. Fiorenza
Researcher
PaperUnderstanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stressAuthorship / preprint / 2020PaperNanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stressAuthorship / preprint / 2020PaperOn the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopyAuthorship / preprint / 2020PaperImpact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopyAuthorship / preprint / 2020