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Nayereh Ghobadi
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AuthorshipAuthorshipNayereh GhobadiANayereh GhobadiResearcherField-Effect Transistor Based on MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic PropertiesWField-Effect Transistor...preprint / 2021Interplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer AntimoneneWInterplay Between Stack...preprint / 2020
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Nayereh Ghobadi

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PaperField-Effect Transistor Based on MoSi2_2N4_4 and WSi2_2N4_4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic PropertiesAuthorship / preprint / 2021PaperInterplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer AntimoneneAuthorship / preprint / 2020

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