Field-Effect Transistor Based on MoSiN and WSiN Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
The electronic properties of a field-effect transistor with two different structures of MoSiN and WSiN monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compounds are semiconductors with an indirect bandgap. Their band gaps can be adjusted by applying in-plane biaxial strain. In the following, the variation of the energies of the valleys and corresponding effective masses with respect to the strain are explored. Finally, the strained MoSiN or WSiN are used as the channel of a p-type FET and the corresponding current-voltage characteristic is explored. The results show this FET has an I/I ratio larger than and subthreshold swing in the range of 96-98 mV/dec. The I/I ratio of these compounds with respect to strain are compared.