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Michael Povolotskyi
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Michael Povolotskyi13 visible / 13 total nodes / 12 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipMichael PovolotskyiAMichael PovolotskyiResearcherEmpirical tight binding parameters for GaAs and MgO with explicit basis through DFT mappingWEmpirical tight binding...preprint / 2012An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and ValidationWAn Environment-dependen...preprint / 2013An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu ConductanceWAn Environment-dependen...preprint / 2013Transferable tight binding model for strained group IV and III-V heterostructuresWTransferable tight bind...preprint / 2015Transferable tight binding model for strained group IV and III-V materials and heterostructuresWTransferable tight bind...preprint / 2016Anisotropic strain in SmSe and SmTe: implications for electronic transportWAnisotropic strain in S...preprint / 2014P-Type Tunnel FETs With Triple HeterojunctionsWP-Type Tunnel FETs With...preprint / 2016Scalable GaSb/InAs tunnel FETs with non-uniform body thicknessWScalable GaSb/InAs tunn...preprint / 2016Design principles for HgTe based topological insulator devicesWDesign principles for H...preprint / 2013Engineering Nanowire n-MOSFETs at Lg < 8 nmWEngineering Nanowire n-...preprint / 2013Brillouin zone unfolding method for effective phonon spectraWBrillouin zone unfoldin...preprint / 2014Surface Passivation in Empirical Tight BindingWSurface Passivation in ...preprint / 2015
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Michael Povolotskyi

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PaperEmpirical tight binding parameters for GaAs and MgO with explicit basis through DFT mappingAuthorship / preprint / 2012PaperAn Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and ValidationAuthorship / preprint / 2013PaperAn Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu ConductanceAuthorship / preprint / 2013PaperTransferable tight binding model for strained group IV and III-V heterostructuresAuthorship / preprint / 2015PaperTransferable tight binding model for strained group IV and III-V materials and heterostructuresAuthorship / preprint / 2016PaperAnisotropic strain in SmSe and SmTe: implications for electronic transportAuthorship / preprint / 2014PaperP-Type Tunnel FETs With Triple HeterojunctionsAuthorship / preprint / 2016PaperScalable GaSb/InAs tunnel FETs with non-uniform body thicknessAuthorship / preprint / 2016

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