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Christian Hauswald

Researcher

PaperCoupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowiresAuthorship / preprint / 2013 PaperInvestigating the origin of the nonradiative decay of bound excitons in GaN nanowiresAuthorship / preprint / 2014 PaperCurrent path in light emitting diodes based on nanowire ensemblesAuthorship / preprint / 2012 PaperLocalization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopyAuthorship / preprint / 2014 PaperSub-meV linewidth in GaN nanowire ensembles: absence of surface excitons due to the field-ionization of donorsAuthorship / preprint / 2014 PaperComparison of the luminous efficiency of Ga- and N-polar In $_{x}$ Ga $_{1-x}$ N/In $_{y}$ Ga $_{1-y}$ N quantum wells grown by plasma-assisted molecular beam epitaxyAuthorship / preprint / 2015 PaperNature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)Authorship / preprint / 2016 PaperCorrelation between In content and emission wavelength of InGaN/GaN nanowire heterostructuresAuthorship / preprint / 2012