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Aryan Afzalian
Researcher
PaperTowards sub-30nm Contacted Gate Pitch, Forked Contact and Dynamically-Doped Nanosheets to Enhance Si and 2D Materials Device ScalingAuthorship / preprint / 2022PaperAb-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped TransistorsAuthorship / preprint / 2020PaperA High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF StudyAuthorship / preprint / 2018PaperAn efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulationsAuthorship / preprint / 2017PaperLow temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier widthAuthorship / preprint / 2011