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Aryan Afzalian

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cond-mat.mes-hall physics.app-ph cond-mat.mtrl-sci physics.comp-ph

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preprint2022arXiv

Towards sub-30nm Contacted Gate Pitch, Forked Contact and Dynamically-Doped Nanosheets to Enhance Si and 2D Materials Device Scaling

We propose a novel Forked-Contacts, Dynamically-Doped Multigate transistor as ultimate scaling booster for both Si and 2D materials in aggressively-scaled nanosheet devices. Using accurate dissipative DFT-NEGF atomistic-simulation fundamentals and cell layout extrinsics, we demonstrate superior and optimal device characteristics and invertor energy - delays down to sub-30-nm pitches, i.e., a 10 nm scaling boost compared to the nanosheet MOSFET references.

preprint2020arXiv

Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors

Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-performance CMOS applications. We show that a combination of good electrostatic control together with a high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10 nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge or III-V and dimensional scaling is expected to end around 12 nm gate-length. We demonstrate that using alternative 2D channel materials, such as the less explored HfS2 or ZrS2, high-drive current down to about 6 nm is, however, achievable. We also propose a novel transistor concept, the Dynamically-Doped Field-Effect Transistor, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to 1 nm gate length using a single-gate architecture and an ultra-compact design. The Dynamically-Doped Field-Effect Transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

preprint2018arXiv

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET line-tunneling current increases significantly with the core diameter $d_{C}$ and outperforms the best III-V axial point-tunneling NW heterojunction TFET $I_{ON}$ by up to 6x for $d_{C}$ = 6.6 nm. Reaching such a high level of current at low supply voltage, however, requires and involves specific and sometime unanticipated optimizations and physics that are thoroughly investigated here. In spite of the commonly accepted view, we also show and explain the weak gate-length dependency observed for the line-tunneling current in a III-V TFET. We further investigate the effect of electron-phonon scattering and discrete-dopant impurity band tails on optimized CS NW TFETs. Including those non-idealities, the CS-TFET inverter performance significantly outperforms that of the axial TFETs. The low-power (LP) VDD = 0.35V CS-inverter delay is comparable to that of the high-performance (HP) Si CMOS using VDD = 0.55V, which shows promise for a LP TFET technology with HP speed.

preprint2017arXiv

An efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations

We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm. Such simulations go far beyond what is typically affordable with today's supercomputers using a traditional real space (RS) TB Hamiltonian technique. We have employed an innovative TB mode space (MS) technique instead and demonstrate large speedup (up to 10,000x) while keeping good accuracy (error smaller than 1 percent) compared to the RS NEGF method. Such technique and capability open new avenues to explore and understand the physics of nanoscale and mesoscopic devices dominated by quantum effects. In particular, our method addresses in an unprecedented way the technological relevant case of band-to-band tunneling (BTBT) in III-V nanowire MOSFETs and broken gap heterojunction tunnel-FETs (TFETs). We demonstrate an accurate match of simulated BTBT currents to experimental measurements in a [111] InAs NW having a 12 nm diameter and a 300 nm long channel. We apply the predictivity of our TB MS simulations and report an in-depth atomistic study of the scaling potential of III-V GAA nanowire heterojunction n and pTFETs quantifying the benefits of this technology for low-power, low-voltage CMOS application. At VDD = 0.3 V and IOFF = 50 pA/um, the on-current (Ion) and energy-delay product (ETP) gain over a Si NW GAA MOSFET are 58x and 56x respectively.

preprint2011arXiv

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.