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Zongyou Yin

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Published work

2 published item(s)

preprint2014arXiv

A Universal, Rapid Method for Clean Transfer of Nanostructures onto Various Substrates

Transfer and integration of nanostructures onto target substrates is the prerequisite for their fundamental studies and practical applications. Conventional transfer techniques that involve stamping, lift-off and/or striping suffer from the process-specific drawbacks, such as the requirement for chemical etchant or high-temperature annealing and the introduction of surface discontinuities and/or contaminations that can greatly hinder the properties and functions of the transferred materials. Herein, we report a universal and rapid transfer method implementable at mild conditions. Nanostructures with various dimensionalities (i.e. nanoparticles, nanowires and nanosheets) and surface properties (i.e. hydrophilic and hydrophobic) can be facilely transferred to diverse substrates including hydrophilic, hydrophobic and flexible surfaces with good fidelity. Importantly, our method ensures the rapid and clean transfer of two-dimensional (2D) materials, and allows for the facile fabrication of vertical heterostructures with various compositions used for electronic devices. We believe that our method can facilitate the development of nano-electronics by accelerating the clean transfer and integration of low-dimensional materials into multidimensional structures.

preprint2013arXiv

Single-Layer MoS2 Phototransistors

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.