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Zixuan Feng

Zixuan Feng contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

A Bayesian Multi-State Data Integration Approach for Estimating County-level Prevalence of Opioid Misuse in the United States

Drug overdose deaths, including from opioids, remain a significant public health threat to the United States (US). To abate the harms of opioid misuse, understanding its prevalence at the local level is crucial for stakeholders in communities to develop response strategies that effectively use limited resources. Although there exist several state-specific studies that provide county-level prevalence estimates, such estimates are not widely available across the country, as the datasets used in these studies are not always readily available in other states, which, therefore, has limited the wider applications of existing models. To fill this gap, we propose a Bayesian multi-state data integration approach that fully utilizes publicly available data sources to estimate county-level opioid misuse prevalence for all counties in the US. The hierarchical structure jointly models opioid misuse prevalence and overdose death outcomes, leverages existing county-level prevalence estimates in limited states and state-level estimates from national surveys, and accounts for heterogeneity across counties and states with counties' covariates and mixed effects. Furthermore, our parsimonious and generalizable modeling framework employs horseshoe+ prior to flexibly shrink coefficients and prevent overfitting, ensuring adaptability as new county-level prevalence data in additional states become available. Using real-world data, our model shows high estimation accuracy through cross-validation and provides nationwide county-level estimates of opioid misuse for the first time.

preprint2026arXiv

Charting Uncertain Waters: A Socio-Technical Roadmap for Sustaining Open Source Communities in the Age of GenAI

Open Source Software (OSS) communities face a wave of uncertainty as Generative AI (GenAI) rapidly transforms how software is created, maintained, and governed. Without clear frameworks, communities risk being overwhelmed by the complexity and ambiguity introduced by GenAI, threatening the collaborative ethos that underpins OSS. To address this gap, we present a Socio-Technical System (STS)-guided conceptual framework that applies McLuhan's Tetrad as an analytic lens to articulate how GenAI reshapes the socio-technical dynamics of OSS development. Through a scenario-based exploration across four components of the STS-guided framework, software practices, documentation, community engagement, and governance, we identify plausible socio-technical impacts and outline a corresponding Roadmap for sustaining OSS communities in the Age of GenAI. This Roadmap will enable OSS researchers and practitioners to interpret emerging transformations, anticipate challenges, and design interventions that foster long-term community resilience. By adopting this framework, OSS leaders and researchers can proactively shape the future of their ecosystems, rather than simply reacting to technological upheaval.

preprint2026arXiv

From Gains to Strains: Modeling Developer Burnout with GenAI Adoption

Generative AI (GenAI) is rapidly reshaping software development workflows. While prior studies emphasize productivity gains, the adoption of GenAI also introduces new pressures that may harm developers' well-being. In this paper, we investigate the relationship between the adoption of GenAI and developers' burnout. We utilized the Job Demands--Resources (JD--R) model as the analytic lens in our empirical study. We employed a concurrent embedded mixed-methods research design, integrating quantitative and qualitative evidence. We first surveyed 442 developers across diverse organizations, roles, and levels of experience. We then employed Partial Least Squares--Structural Equation Modeling (PLS-SEM) and regression to model the relationships among job demands, job resources, and burnout, complemented by a qualitative analysis of open-ended responses to contextualize the quantitative findings. Our results show that GenAI adoption heightens burnout by increasing job demands, while job resources and positive perceptions of GenAI mitigate these effects, reframing adoption as an opportunity.

preprint2020arXiv

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with dopant density in the range of 1018 cm-3 was obtained in all (AlxGa1-x)2O3 layers containing different Al contents. We have demonstrated that for the single phase \b{eta}-(AlxGa1-x)2O3 films with Al content of x<0.30, dopants prefer to occupy on Ga sites while Al site is preferred for high Al content (x>0.50) (AlxGa1-x)2O3 layers. It was also observed for Al content, x = 0.30-0.50, no specific cationic site occupancy was observed, Si occupies either Al or Ga sites. This can be attributed to highly inhomogeneous layers within this composition range due to which dopant Si atoms are either in the Al-rich or Al-depleted regions.

preprint2020arXiv

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L$_\mathrm{gd}$) of 6 um and 0.6 um respectively in $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$, at a high channel sheet charge density of 1.8x10$^\mathrm{13}$cm$^\mathrm{-2}$. The high sheet charge density together with high breakdown field enabled a record power figure of merit (V$^\mathrm{2}$$_\mathrm{br}$/R$_\mathrm{on}$) of 376 MW/cm$^\mathrm{2}$ at a gate-drain spacing of 3 um.

preprint2020arXiv

Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$

A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$-Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties.