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Hongping Zhao

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cond-mat.mtrl-sci physics.app-ph

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preprint2021arXiv

Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$

A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown $(ZnGe)_{1-x}Ga_{2x}N_2$ , for $x = 0$ and $0.06$ , and $GaN$ using X-ray photoemission spectroscopy. The valence band of $ZnGeN_2$ was found to lie $1.45-1.65 eV$ above that of $GaN$ . This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For $(ZnGe)_{0.94}Ga_{0.12}N_2$ the value was determined to be $1.29 eV$ , $~10-20\%$ lower than that of $ZnGeN_2$ . The experimental determination of the large band offset between $ZnGeN_2$ and $GaN$ provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.

preprint2020arXiv

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with dopant density in the range of 1018 cm-3 was obtained in all (AlxGa1-x)2O3 layers containing different Al contents. We have demonstrated that for the single phase \b{eta}-(AlxGa1-x)2O3 films with Al content of x<0.30, dopants prefer to occupy on Ga sites while Al site is preferred for high Al content (x>0.50) (AlxGa1-x)2O3 layers. It was also observed for Al content, x = 0.30-0.50, no specific cationic site occupancy was observed, Si occupies either Al or Ga sites. This can be attributed to highly inhomogeneous layers within this composition range due to which dopant Si atoms are either in the Al-rich or Al-depleted regions.

preprint2020arXiv

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

The performance of ultra-wide band gap materials like $β$ -Ga $_\mathrm{2}$ O $_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO $_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L $_\mathrm{gd}$ ) of 6 um and 0.6 um respectively in $β$ -Ga $_\mathrm{2}$ O $_\mathrm{3}$ , at a high channel sheet charge density of 1.8x10 $^\mathrm{13}$ cm $^\mathrm{-2}$ . The high sheet charge density together with high breakdown field enabled a record power figure of merit (V $^\mathrm{2}$ $_\mathrm{br}$ /R $_\mathrm{on}$ ) of 376 MW/cm $^\mathrm{2}$ at a gate-drain spacing of 3 um.

preprint2020arXiv

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

A new record-high room temperature electron Hall mobility ( $μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$ ) for $β$ -Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$ -Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties.

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Hongping Zhao

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4 publications

Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

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Hongping Zhao

Research overview

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4 publications

Experimental determination of the valence band offsets of ZnGeN2ZnGeN_2ZnGeN2​ and ZnGe0.94Ga0.12N2ZnGe_{0.94}Ga_{0.12}N_2ZnGe0.94​Ga0.12​N2​ with GaNGaNGaN

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) βββ-Ga2_{2}2​O3_{3}3​

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Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$