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Researcher profile

Zijin Lei

Zijin Lei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.soft

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Published work

3 published item(s)

preprint2020arXiv

Electronic g-factor and Magneto-transport in InSb Quantum Wells

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO$_2$ substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of $Δ_{ST}\sim 2.3$ meV, a strong spin-orbit interaction of $Δ_{SO}\sim 140$ $μ$eV, and a large and strongly level-dependent Landé g factor of $\sim 12.5$. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

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preprint2015arXiv

Energy issues for construction of 10 nm sized electrostatic traps in saline

In addition to optical tweezers, magnetic tweezers and dielectrophoresis technique, trapping and manipulating micro or nano particles with electrostatic tweezers attracted attention in recent years. Here we present a simulation study on the contributions of electrostatic energy, change of entropy, as well as van der Waals interaction in the trapping performance of a 10 nm sized, pentagon shaped nano trap for a charged nanoparticle in saline. The results show that the system has a moderate trapping well of moderate depth; van der Waals interaction enhances the trapping capability, and the entropy term induced in distribution contributes significantly in the trapping capability. This work provides some valuable clues to the development of practical submicron devices of electrostatic tweezers working in a solution with ions.

0 citations0 reviewsNo code linkedOpen access