Researcher profile

Zhuying Wang

Zhuying Wang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

Atomic-scale spin sensing of a 2D $d$-wave altermagnet via helical tunneling

Altermagnetism simultaneously possesses nonrelativistic spin responses and zero net magnetization, thus combining advantages of ferromagnetism and antiferromagnetism. This superiority originates from its unique dual feature, i.e., opposite-magnetic sublattices in real space and alternating spin polarization in momentum space enforced by the same crystal symmetry. Therefore, the determination of an altermagnetic order and its unique spin response inherently necessitates atomic-scale spin-resolved measurements in real and momentum spaces, an experimental milestone yet to be achieved. Here, via utilizing the helical edge (hinge) modes of a higher order topological insulator as the spin sensor, we realize spin-resolved scanning tunneling microscopy which enables us to pin down the dual-space feature of a layered $d$-wave altermagnet, KV$_2$Se$_2$O. In real space, atomic-registered mapping demonstrates the checkerboard antiferromagnetic order together with density-wave lattice modulation, and in momentum space, spin-resolved spectroscopic imaging provides a direct visualization of d-wave spin splitting of the band structure. Critically, using this new topology-guaranteed spin filter we directly reveal the unidirectional, spin-polarized quasiparticle excitations originating from the crystal symmetry-paired X and Y valleys around opposite magnetic sublattices simultaneously --the unique spin response for $d$-wave altermagnetism. Our experiments establish a solid basis for the exploration and utilization of altermagnetism in layered materials and further facilitate access to atomic-scale spin sensing and manipulating of 2D quantum materials.

preprint2025arXiv

Observation of robust one-dimensional edge channels in a three-dimensional quantum spin Hall insulator

Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators (HOTIs), but the number of materials realizing these topologies is still quite limited. Here, we provide evidence for topological edge states within a novel topology named three-dimensional (3D) QSHIs. Its topology originates solely from a nonzero $S_z$ spin Chern number for each $k_z$ plane of the crystal and is realized in bulk $α$-Bi$_4$I$_4$ with trivial symmetry indicators, as we show by density functional theory calculations. We experimentally observe the related edge states at each type of monolayer and bilayer step of this material by scanning tunneling microscopy. Consistently, the edge states are neither interrupted, nor backscattered by defects at the step edges corroborating their helical character as expected from the nontrivial topology. Furthermore, two individual edge channels are directly observed at bilayer steps without visible interaction gap opening, demonstrating the robustness of these edge modes against vertical stacking. Our results establish $α$-Bi$_4$I$_4$ as the first material realization of a 3D QSHI whose definition goes beyond the scope of topological symmetry indicators, and provide a pathway for realizing nearly-quantized spin Hall conductivity per unit cell in a bulk crystal.